制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
封装 / 箱体 | Package_Case | TO-247AD-3 |
安装风格 | Mounting Style | Through Hole |
配置 | Configuration | Single |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 600 V |
集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | 2.1 V |
栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 20 V |
在25 C的连续集电极电流 | Continuous Collector Current At25C | 140 A |
Pd-功率耗散 | Pd_Power Dissipation | 454 W |
最小工作温度 | Minimum Operating Temperature | - 55 C |
封装 | Packaging | Tube |
高度 | Height | 20.7 mm |
长度 | Length | 15.87 mm |
宽度 | Width | 5.31 mm |
商标 | Brand | Infineon / IR |
产品类型 | Product Type | IGBT Transistors |
标准包装数量 | Standard Pack Qty | 400 |
子类别 | Subcategory | IGBTs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | VS-8EWS08STR-M3 | 1949 | 1723 | Infineon | |
2 | VS-T40HFL60S02 | 0 | Infineon | ||
3 | SI1317DL-T1-GE3 | 0 | Infineon | ||
4 | IRF720SPBF | 0 | Infineon | ||
5 | DTC123TM3T5G | 0 | Infineon | ||
6 | SS2PH5HM3/85A | 0 | Infineon | ||
7 | TK7A45DA(STA4,Q,M) | 0 | Infineon | ||
8 | IPG20N06S2L50AATMA1 | 0 | Infineon | ||
9 | AZ23B20-G3-18 | 0 | Infineon | ||
10 | 1N4760A BK PBFREE | 0 | Infineon | ||
11 | SI4829DY-T1-E3 | 0 | Infineon | ||
12 | V2F22HM3/I | 0 | Infineon | ||
13 | TZX5V6A-TR | 0 | Infineon | ||
14 | SR303 R0 | 0 | Infineon | ||
15 | VS-VSKDS408/060 | 0 | Infineon | ||
16 | VS-VSKE320-20PBF | 0 | Infineon | ||
17 | 1N5353BRLG | 2044+ | 2567 | Infineon | |
18 | BZX79-C11,143 | 0 | Infineon | ||
19 | BZG03C120-M3-08 | 0 | Infineon | ||
20 | KBU1006 | 0 | Infineon |