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SI1317DL-T1-GE3 国内现货
今日价格: 价格走势图 >
名称:SI1317DL-T1-GE3
品牌:Vishay
说明:MOSFET -20V Vds 8V Vgs SC70-3
系列:SI1
货期:两周
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规格参数
价格走势
制造商 Manufacturer Vishay
RoHS Rohs Y
技术 Technology Si
安装风格 Mounting Style SMD/SMT
封装 / 箱体 Package_Case SOT-323-3
晶体管极性 Transistor Polarity P-Channel
通道数量 Number Of Channels 1 Channel
Vds-漏源极击穿电压 Vds_Drain_Source Breakdown Voltage 20 V
Id-连续漏极电流 Id_Continuous Drain Current - 1.4 A
Rds On-漏源导通电阻 Rds On_Drain_Source Resistance 150 mOhms
Vgs - 栅极-源极电压 Vgs_Gate_Source Voltage 4.5 V
Vgs th-栅源极阈值电压 Vgs Th_Gate_Source Threshold Voltage 450 mV
Qg-栅极电荷 Qg_Gate Charge 4.3 nC
最小工作温度 Minimum Operating Temperature - 50 C
最大工作温度 Maximum Operating Temperature + 150 C
Pd-功率耗散 Pd_Power Dissipation 500 mW
通道模式 Channel Mode Enhancement
商标名 Tradename TrenchFET
封装 Packaging Cut Tape
封装 Packaging MouseReel
封装 Packaging Reel
配置 Configuration Single
系列 Series SI1
晶体管类型 Transistor Type 1 P-Channel
商标 Brand Vishay Semiconductors
正向跨导 - 最小值 Forward Transconductance_Min 5 S
下降时间 Fall Time 7 ns
产品类型 Product Type MOSFET
上升时间 Rise Time 20 ns
标准包装数量 Standard Pack Qty 3000
子类别 Subcategory MOSFETs
典型关闭延迟时间 Typical Turn_Off Delay Time 23 ns
典型接通延迟时间 Typical Turn_On Delay Time 12 ns
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