制造商 |
Manufacturer |
Toshiba |
RoHS |
Rohs |
Y |
技术 |
Technology |
Si |
安装风格 |
Mounting Style |
SMD/SMT |
封装 / 箱体 |
Package_Case |
TO-252-3 |
晶体管极性 |
Transistor Polarity |
N-Channel |
通道数量 |
Number Of Channels |
1 Channel |
Vds-漏源极击穿电压 |
Vds_Drain_Source Breakdown Voltage |
600 V |
Id-连续漏极电流 |
Id_Continuous Drain Current |
8 A |
Rds On-漏源导通电阻 |
Rds On_Drain_Source Resistance |
420 mOhms |
Vgs - 栅极-源极电压 |
Vgs_Gate_Source Voltage |
30 V |
Vgs th-栅源极阈值电压 |
Vgs Th_Gate_Source Threshold Voltage |
3.7 V |
Qg-栅极电荷 |
Qg_Gate Charge |
18.5 nC |
最小工作温度 |
Minimum Operating Temperature |
- 55 C |
最大工作温度 |
Maximum Operating Temperature |
+ 150 C |
Pd-功率耗散 |
Pd_Power Dissipation |
80 W |
商标名 |
Tradename |
DTMOSIV |
封装 |
Packaging |
Cut Tape |
封装 |
Packaging |
MouseReel |
封装 |
Packaging |
Reel |
配置 |
Configuration |
Single |
高度 |
Height |
2.3 mm |
长度 |
Length |
6.5 mm |
系列 |
Series |
TK8P60W |
晶体管类型 |
Transistor Type |
1 N-Channel |
宽度 |
Width |
5.5 mm |
商标 |
Brand |
Toshiba |
下降时间 |
Fall Time |
5.5 ns |
产品类型 |
Product Type |
MOSFET |
上升时间 |
Rise Time |
20 ns |
标准包装数量 |
Standard Pack Qty |
2000 |
子类别 |
Subcategory |
MOSFETs |
典型关闭延迟时间 |
Typical Turn_Off Delay Time |
70 ns |
典型接通延迟时间 |
Typical Turn_On Delay Time |
40 ns |