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TK8P60W,RVQ 国内现货
今日价格: 价格走势图 >
名称:TK8P60W,RVQ
品牌:Toshiba
说明:MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
系列:TK8P60W
货期:两周
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规格参数
价格走势
制造商 Manufacturer Toshiba
RoHS Rohs Y
技术 Technology Si
安装风格 Mounting Style SMD/SMT
封装 / 箱体 Package_Case TO-252-3
晶体管极性 Transistor Polarity N-Channel
通道数量 Number Of Channels 1 Channel
Vds-漏源极击穿电压 Vds_Drain_Source Breakdown Voltage 600 V
Id-连续漏极电流 Id_Continuous Drain Current 8 A
Rds On-漏源导通电阻 Rds On_Drain_Source Resistance 420 mOhms
Vgs - 栅极-源极电压 Vgs_Gate_Source Voltage 30 V
Vgs th-栅源极阈值电压 Vgs Th_Gate_Source Threshold Voltage 3.7 V
Qg-栅极电荷 Qg_Gate Charge 18.5 nC
最小工作温度 Minimum Operating Temperature - 55 C
最大工作温度 Maximum Operating Temperature + 150 C
Pd-功率耗散 Pd_Power Dissipation 80 W
商标名 Tradename DTMOSIV
封装 Packaging Cut Tape
封装 Packaging MouseReel
封装 Packaging Reel
配置 Configuration Single
高度 Height 2.3 mm
长度 Length 6.5 mm
系列 Series TK8P60W
晶体管类型 Transistor Type 1 N-Channel
宽度 Width 5.5 mm
商标 Brand Toshiba
下降时间 Fall Time 5.5 ns
产品类型 Product Type MOSFET
上升时间 Rise Time 20 ns
标准包装数量 Standard Pack Qty 2000
子类别 Subcategory MOSFETs
典型关闭延迟时间 Typical Turn_Off Delay Time 70 ns
典型接通延迟时间 Typical Turn_On Delay Time 40 ns
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