制造商 | Manufacturer | STMicroelectronics |
RoHS | Rohs | Y |
技术 | Technology | Si |
封装 / 箱体 | Package_Case | TO-220-3 |
安装风格 | Mounting Style | Through Hole |
配置 | Configuration | Single |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 600 V |
栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 20 V |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
系列 | Series | STGP19NC60HD |
封装 | Packaging | Tube |
集电极最大连续电流 Ic | Continuous Collector Current Ic Max | 40 A |
高度 | Height | 9.15 mm |
长度 | Length | 10.4 mm |
宽度 | Width | 4.6 mm |
商标 | Brand | STMicroelectronics |
产品类型 | Product Type | IGBT Transistors |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | IGBTs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | SQJ488EP-T1_BE3 | 0 | STMicroelectronics | ||
2 | LL103B-GS18 | 0 | STMicroelectronics | ||
3 | SMBG5381A/TR13 | 0 | STMicroelectronics | ||
4 | 1N4744G R0 | 0 | STMicroelectronics | ||
5 | SZMMSZ4715T1G | 0 | STMicroelectronics | ||
6 | RN1304,LF | 0 | STMicroelectronics | ||
7 | JANTXV1N5539C-1 | 0 | STMicroelectronics | ||
8 | SBC847BPDW1T3G | 0 | STMicroelectronics | ||
9 | VBT2080S-E3/4W | 0 | STMicroelectronics | ||
10 | JANTXV1N5526D-1 | 0 | STMicroelectronics | ||
11 | JANTX1N6844U3 | 0 | STMicroelectronics | ||
12 | RSX101M-30TR | 0 | STMicroelectronics | ||
13 | RS2M R4G | 0 | STMicroelectronics | ||
14 | JAN1N755D-1/TR | 0 | STMicroelectronics | ||
15 | DF23MR12W1M1PB11BPSA1 | 0 | STMicroelectronics | ||
16 | MBRS2560CTHRNG | 0 | STMicroelectronics | ||
17 | JANTX1N5523C-1 | 0 | STMicroelectronics | ||
18 | SBR140S1FQ-7 | 0 | STMicroelectronics | ||
19 | SI7129DN-T1-GE3 | 3000 | STMicroelectronics | ||
20 | JANTX1N5811 | 0 | STMicroelectronics |