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STGB15M65DF2
国内现货
今日价格:
价格走势图 >
名称：STGB15M65DF2
品牌：STMicroelectronics
说明：IGBT 晶体管 Trench gate field-stop IGBT M series, 650 V 15 A low loss
系列：STGB15M65DF2
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | STMicroelectronics |
| RoHS | Rohs | Y |
| 技术 | Technology | Si |
| 封装 / 箱体 | Package_Case | D2PAK-3 |
| 安装风格 | Mounting Style | SMD/SMT |
| 配置 | Configuration | Single |
| 集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 650 V |
| 集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | 1.55 V |
| 栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 20 V |
| 在25 C的连续集电极电流 | Continuous Collector Current At25C | 30 A |
| Pd-功率耗散 | Pd_Power Dissipation | 136 W |
| 最小工作温度 | Minimum Operating Temperature | - 55 C |
| 最大工作温度 | Maximum Operating Temperature | + 175 C |
| 系列 | Series | STGB15M65DF2 |
| 封装 | Packaging | Cut Tape |
| 封装 | Packaging | MouseReel |
| 封装 | Packaging | Reel |
| 集电极最大连续电流 Ic | Continuous Collector Current Ic Max | 30 A |
| 商标 | Brand | STMicroelectronics |
| 栅极—射极漏泄电流 | Gate_Emitter Leakage Current | +/- 250 uA |
| 产品类型 | Product Type | IGBT Transistors |
| 标准包装数量 | Standard Pack Qty | 1000 |
| 子类别 | Subcategory | IGBTs |
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