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NST847BDP6T5G
国内现货
今日价格:
价格走势图 >
名称：NST847BDP6T5G
品牌：ON Semiconductor
说明：双极晶体管 - 双极结型晶体管(BJT) DUAL NPN GP TRANS
系列：NST847BDP6
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | ON Semiconductor |
| RoHS | Rohs | Y |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | SOT-963-6 |
| 晶体管极性 | Transistor Polarity | NPN |
| 配置 | Configuration | Dual |
| 集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 45 V |
| 集电极—基极电压 VCBO | Collector_Base Voltage Vcbo | 50 V |
| 发射极 - 基极电压 VEBO | Emitter_Base Voltage Vebo | 6 V |
| 最大直流电集电极电流 | Maximum Dc Collector Current | 0.1 A |
| Pd-功率耗散 | Pd_Power Dissipation | 420 mW |
| 增益带宽产品fT | Gain Bandwidth Product Ft | 100 MHz |
| 最小工作温度 | Minimum Operating Temperature | - 55 C |
| 最大工作温度 | Maximum Operating Temperature | + 150 C |
| 系列 | Series | NST847BDP6 |
| 封装 | Packaging | Cut Tape |
| 封装 | Packaging | MouseReel |
| 封装 | Packaging | Reel |
| 直流电流增益 hFE 最大值 | Dc Current Gain Hfe Max | 200 at 2 mA, 5 V |
| 高度 | Height | 0.37 mm |
| 长度 | Length | 1 mm |
| 技术 | Technology | Si |
| 宽度 | Width | 0.8 mm |
| 商标 | Brand | ON Semiconductor |
| 直流集电极/Base Gain hfe Min | Dc Collector_Base Gain Hfe Min | 200 at 2 mA, 5 V |
| 产品类型 | Product Type | BJTs - Bipolar Transistors |
| 标准包装数量 | Standard Pack Qty | 8000 |
| 子类别 | Subcategory | Transistors |
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