制造商 |
Manufacturer |
IXYS |
RoHS |
Rohs |
Y |
安装风格 |
Mounting Style |
Through Hole |
封装 / 箱体 |
Package_Case |
TO-247-3 |
晶体管极性 |
Transistor Polarity |
N-Channel |
Vds-漏源极击穿电压 |
Vds_Drain_Source Breakdown Voltage |
650 V |
Id-连续漏极电流 |
Id_Continuous Drain Current |
24 A |
Rds On-漏源导通电阻 |
Rds On_Drain_Source Resistance |
145 mOhms |
Vgs - 栅极-源极电压 |
Vgs_Gate_Source Voltage |
30 V |
Vgs th-栅源极阈值电压 |
Vgs Th_Gate_Source Threshold Voltage |
3 V |
最小工作温度 |
Minimum Operating Temperature |
- 55 C |
最大工作温度 |
Maximum Operating Temperature |
+ 150 C |
Pd-功率耗散 |
Pd_Power Dissipation |
390 W |
商标名 |
Tradename |
HiPerFET |
封装 |
Packaging |
Tube |
配置 |
Configuration |
Single |
产品 |
Product |
Power MOSFET Modules |
类型 |
Type |
X2-Class |
商标 |
Brand |
IXYS |
下降时间 |
Fall Time |
19 ns |
产品类型 |
Product Type |
MOSFET |
上升时间 |
Rise Time |
25 ns |
标准包装数量 |
Standard Pack Qty |
30 |
子类别 |
Subcategory |
MOSFETs |
典型关闭延迟时间 |
Typical Turn_Off Delay Time |
50 ns |
典型接通延迟时间 |
Typical Turn_On Delay Time |
20 ns |