制造商 |
Manufacturer |
IXYS |
RoHS |
Rohs |
Y |
技术 |
Technology |
Si |
安装风格 |
Mounting Style |
SMD/SMT |
封装 / 箱体 |
Package_Case |
TO-263-3 |
晶体管极性 |
Transistor Polarity |
N-Channel |
通道数量 |
Number Of Channels |
1 Channel |
Vds-漏源极击穿电压 |
Vds_Drain_Source Breakdown Voltage |
200 V |
Id-连续漏极电流 |
Id_Continuous Drain Current |
90 A |
Rds On-漏源导通电阻 |
Rds On_Drain_Source Resistance |
12 mOhms |
Vgs - 栅极-源极电压 |
Vgs_Gate_Source Voltage |
20 V |
Vgs th-栅源极阈值电压 |
Vgs Th_Gate_Source Threshold Voltage |
2.5 V |
Qg-栅极电荷 |
Qg_Gate Charge |
78 nC |
最小工作温度 |
Minimum Operating Temperature |
- 55 C |
最大工作温度 |
Maximum Operating Temperature |
+ 175 C |
Pd-功率耗散 |
Pd_Power Dissipation |
390 W |
通道模式 |
Channel Mode |
Enhancement |
商标名 |
Tradename |
HiPerFET |
封装 |
Packaging |
Tube |
配置 |
Configuration |
Single |
晶体管类型 |
Transistor Type |
1 N-Channel |
商标 |
Brand |
IXYS |
正向跨导 - 最小值 |
Forward Transconductance_Min |
60 S |
下降时间 |
Fall Time |
13 ns |
产品类型 |
Product Type |
MOSFET |
上升时间 |
Rise Time |
26 ns |
标准包装数量 |
Standard Pack Qty |
50 |
子类别 |
Subcategory |
MOSFETs |
典型关闭延迟时间 |
Typical Turn_Off Delay Time |
62 ns |
典型接通延迟时间 |
Typical Turn_On Delay Time |
22 ns |