制造商 | Manufacturer | IXYS |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TO-268-3 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 500 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 52 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 120 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 30 V |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
Pd-功率耗散 | Pd_Power Dissipation | 960 W |
商标名 | Tradename | HiPerFET |
封装 | Packaging | Tube |
配置 | Configuration | Single |
系列 | Series | IXFT52N50 |
晶体管类型 | Transistor Type | 1 N-Channel |
类型 | Type | PolarP2 HiperFET Power MOSFET |
商标 | Brand | IXYS |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 30 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | SISA14DN-T1-GE3 | 5530 | IXYS | ||
2 | 1N6003A | 0 | IXYS | ||
3 | MJE181G | 0 | IXYS | ||
4 | 1N6019B | 0 | IXYS | ||
5 | BAS16WQ-7-F | 0 | IXYS | ||
6 | S30440 | 0 | IXYS | ||
7 | BZX55B4V7-TAP | 10000 | IXYS | ||
8 | JAN1N5529BUR-1 | 0 | IXYS | ||
9 | MMBZ5235B-7-F | 0 | IXYS | ||
10 | FDC6310P | n/a | 877 | IXYS | |
11 | FDPF8D5N10C | 880 | IXYS | ||
12 | JANTXV1N5531CUR-1/TR | 0 | IXYS | ||
13 | PMZ600UNELYL | 350 | IXYS | ||
14 | VFT3060G-E3/4W | 0 | IXYS | ||
15 | 1N4897/TR | 0 | IXYS | ||
16 | NTHD4P02FT1G | 0 | IXYS | ||
17 | 2N5087 PBFREE | 0 | IXYS | ||
18 | VS-SD400C16C | 12+ | 24 | IXYS | |
19 | BAS40W-05-7-F | 0 | IXYS | ||
20 | NJD35N04T4G | 2306160024 | 2500 | IXYS |