制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TO-252-3 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 100 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 80 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 15 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
Qg-栅极电荷 | Qg_Gate Charge | 81 nC |
Pd-功率耗散 | Pd_Power Dissipation | 260 W |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
配置 | Configuration | Single |
高度 | Height | 2.3 mm |
长度 | Length | 6.5 mm |
晶体管类型 | Transistor Type | 1 N-Channel |
宽度 | Width | 6.22 mm |
商标 | Brand | Infineon / IR |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 800 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 3EZ51D5e3/TR8 | 0 | Infineon | ||
2 | 1N1190R | 0 | Infineon | ||
3 | JANTX2N5151 | 0 | Infineon | ||
4 | MMBZ5223BLT1G | 2018/38 | 3000 | Infineon | |
5 | BZX84C4V7-T1 | 0 | Infineon | ||
6 | SS2P3L-M3/85A | 0 | Infineon | ||
7 | BZX79C4V7 R0G | 0 | Infineon | ||
8 | S3GB M4G | 0 | Infineon | ||
9 | MMBT4401M3T5G | 0 | Infineon | ||
10 | TD210N16KOF | 0 | Infineon | ||
11 | IRFRC20PBF | 247800 | Infineon | ||
12 | VB20200G-E3/4W | 0 | Infineon | ||
13 | CMPZ5243B TR PBFREE | 0 | Infineon | ||
14 | IRLML6401TRPBF | 2624 | Infineon | ||
15 | IRF7379TRPBF | 14+ | 8000 | Infineon | |
16 | 1N4737P/TR8 | 0 | Infineon | ||
17 | V1FL45-M3/H | 0 | Infineon | ||
18 | BZX55C27-TR | 0 | Infineon | ||
19 | TIP110TU | 0 | Infineon | ||
20 | 1N4744AUR | 0 | Infineon |