制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SO-8 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 2 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 12 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 10 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 15 mOhms |
Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 2 V |
Qg-栅极电荷 | Qg_Gate Charge | 26 nC |
最大工作温度 | Maximum Operating Temperature | + 150 C |
Pd-功率耗散 | Pd_Power Dissipation | 2 W |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
配置 | Configuration | Dual |
高度 | Height | 1.75 mm |
长度 | Length | 4.9 mm |
晶体管类型 | Transistor Type | 2 N-Channel |
宽度 | Width | 3.9 mm |
商标 | Brand | Infineon / IR |
正向跨导 - 最小值 | Forward Transconductance_Min | 18 S |
下降时间 | Fall Time | 6.3 ns |
产品类型 | Product Type | MOSFET |
上升时间 | Rise Time | 22 ns |
标准包装数量 | Standard Pack Qty | 4000 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | TSI20H100CW C0G | 0 | Infineon | ||
2 | PMBT2907A,215 | 2年内 | 10000 | Infineon | |
3 | LLZ5253B L0 | 0 | Infineon | ||
4 | APT1201R6BVFRG | 0 | Infineon | ||
5 | JANTX1N3041BUR-1/TR | 0 | Infineon | ||
6 | MMSZ5245BT1G | 20201109 | 500 | Infineon | |
7 | 1N5342C/TR12 | 0 | Infineon | ||
8 | TSM3446CX6 RFG | 0 | Infineon | ||
9 | NRVTS10120MFST3G | 0 | Infineon | ||
10 | SI7848BDP-T1-E3 | N/A | 1800 | Infineon | |
11 | SP000919762 | 0 | Infineon | ||
12 | JANTXV1N6322 | 0 | Infineon | ||
13 | RS2A R5G | 0 | Infineon | ||
14 | STD7NM64N | 0 | Infineon | ||
15 | V8P45-M3/87A | 0 | Infineon | ||
16 | GDZ16B-G3-18 | 0 | Infineon | ||
17 | VS-CPV364M4UPBF | 0 | Infineon | ||
18 | MMBZ4683-HE3-08 | 0 | Infineon | ||
19 | VSSAF5L45-M3/6A | 160 | Infineon | ||
20 | B230A-13-F | 1950+ | 4083 | Infineon |