制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | TO-220-3 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 40 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 120 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 5.5 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
Qg-栅极电荷 | Qg_Gate Charge | 68 nC |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 175 C |
Pd-功率耗散 | Pd_Power Dissipation | 140 W |
通道模式 | Channel Mode | Enhancement |
封装 | Packaging | Tube |
配置 | Configuration | Single |
高度 | Height | 15.65 mm |
长度 | Length | 10 mm |
晶体管类型 | Transistor Type | 1 N-Channel |
宽度 | Width | 4.4 mm |
商标 | Brand | Infineon Technologies |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | DDTD122JC-7-F | 0 | Infineon | ||
2 | 2N6041 PBFREE | 0 | Infineon | ||
3 | FDS6298 | 0 | Infineon | ||
4 | JANTXV1N4118DUR-1/TR | 0 | Infineon | ||
5 | S1AHE2 | 0 | Infineon | ||
6 | AUIRF1018E | 0 | Infineon | ||
7 | VS-113MT80KPBF | 0 | Infineon | ||
8 | SS12P2LHM3_A/H | 0 | Infineon | ||
9 | B280-13-F | 10000 | Infineon | ||
10 | IPB180N03S4LH0ATMA1 | 0 | Infineon | ||
11 | BC857BT116 | NA | 3000 | Infineon | |
12 | DZ23C36-G3-18 | 0 | Infineon | ||
13 | DZT853-13 | 2500 | Infineon | ||
14 | BZD27C91PHMTG | 0 | Infineon | ||
15 | RS2M R5G | 0 | Infineon | ||
16 | SET111411 | 0 | Infineon | ||
17 | 1N6327DUS/TR | 0 | Infineon | ||
18 | APT10M19SVRG | 0 | Infineon | ||
19 | RL202-T | 0 | Infineon | ||
20 | JANTX1N746C-1/TR | 0 | Infineon |