制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TO-252-3 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 100 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 42 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 36 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
Qg-栅极电荷 | Qg_Gate Charge | 73.3 nC |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 175 C |
Pd-功率耗散 | Pd_Power Dissipation | 3.8 W |
通道模式 | Channel Mode | Enhancement |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
配置 | Configuration | Single |
高度 | Height | 2.3 mm |
长度 | Length | 6.5 mm |
晶体管类型 | Transistor Type | 1 N-Channel |
宽度 | Width | 6.22 mm |
商标 | Brand | Infineon / IR |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 800 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | DTA143EMT2L | NA | 100 | Infineon | |
2 | DMT35M4LFVW-13 | 0 | Infineon | ||
3 | DTA123JCA-TP | 0 | Infineon | ||
4 | ZDT6753TC | 0 | Infineon | ||
5 | BZT52-B33J | 10000 | Infineon | ||
6 | PMEG45A10EPDAZ | 0 | Infineon | ||
7 | 1N485BTR | 0 | Infineon | ||
8 | 1F12-B | 0 | Infineon | ||
9 | PDS3200Q-13 | 2000 | Infineon | ||
10 | SK115B HR5 | 0 | Infineon | ||
11 | NX138BKWF | 0 | Infineon | ||
12 | BCP5216TA | 10000 | Infineon | ||
13 | 1PMT4131/TR13 | 0 | Infineon | ||
14 | 1N4750Ae3/TR13 | 0 | Infineon | ||
15 | V8PA12HM3/I | 0 | Infineon | ||
16 | PEMH9,315 | 0 | Infineon | ||
17 | STF16N65M5 | 0 | Infineon | ||
18 | Z300B-B | 0 | Infineon | ||
19 | JANTXV1N4495US | 0 | Infineon | ||
20 | VS-150KS20 | 0 | Infineon |