制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TO-263-3 |
晶体管极性 | Transistor Polarity | P-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 40 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 80 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 7.4 mOhms |
Qg-栅极电荷 | Qg_Gate Charge | 25 nC |
Pd-功率耗散 | Pd_Power Dissipation | 88 W |
资格 | Qualification | AEC-Q101 |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
配置 | Configuration | Single |
高度 | Height | 4.4 mm |
长度 | Length | 10 mm |
系列 | Series | IPB80P04 |
晶体管类型 | Transistor Type | 1 P-Channel |
宽度 | Width | 9.25 mm |
商标 | Brand | Infineon Technologies |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | DMN6069SFG-13 | 0 | Infineon | ||
2 | RS2AA F2G | 0 | Infineon | ||
3 | JANTX1N4117DUR-1/TR | 0 | Infineon | ||
4 | BYG20GHM2G | 0 | Infineon | ||
5 | B554-2T | 0 | Infineon | ||
6 | STPS1545CR | 0 | Infineon | ||
7 | CMZ16(TE12L,Q,M) | 0 | Infineon | ||
8 | FDS8884 | 1639 | 1172 | Infineon | |
9 | 1N6003UR | 0 | Infineon | ||
10 | BZT52B5V6-E3-08 | 0 | Infineon | ||
11 | BC807-40LR | 0 | Infineon | ||
12 | JAN1N5297UR-1 | 0 | Infineon | ||
13 | JAN1N3034CUR-1 | 0 | Infineon | ||
14 | CZT953 TR PBFREE | 0 | Infineon | ||
15 | IPD034N06N3 G | 0 | Infineon | ||
16 | 1N4746AHR0G | 0 | Infineon | ||
17 | VS-12FLR40S02 | 0 | Infineon | ||
18 | UDZLVTE-17110 | 0 | Infineon | ||
19 | IRFH5007TRPBF | 4000 | Infineon | ||
20 | IRFS4410ZTRLPBF | 2019 | 6 | Infineon |