制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
产品 | Product | IGBT Silicon Modules |
配置 | Configuration | 6-Pack |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 1200 V |
集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | 1.76 V |
在25 C的连续集电极电流 | Continuous Collector Current At25C | 450 A |
栅极—射极漏泄电流 | Gate_Emitter Leakage Current | 400 nA |
Pd-功率耗散 | Pd_Power Dissipation | 20 mW |
封装 / 箱体 | Package_Case | Module |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
封装 | Packaging | Tray |
技术 | Technology | Si |
商标 | Brand | Infineon Technologies |
安装风格 | Mounting Style | Screw |
栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 20 V |
产品类型 | Product Type | IGBT Modules |
标准包装数量 | Standard Pack Qty | 4 |
子类别 | Subcategory | IGBTs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 1N991B | 0 | Infineon | ||
2 | STW43N60DM2 | n/a | 3300 | Infineon | |
3 | VSSC8L45-M3/9AT | 2233 | 1006 | Infineon | |
4 | SBC847BDW1T3G | n/a | 130000 | Infineon | |
5 | TZQ5265B-GS18 | 0 | Infineon | ||
6 | DF23MR12W1M1B11BPSA1 | 0 | Infineon | ||
7 | PMDXB950UPELZ | 0 | Infineon | ||
8 | S1D E3G | 0 | Infineon | ||
9 | AZ23C5V1 RF | 0 | Infineon | ||
10 | CDLL4580A | 0 | Infineon | ||
11 | CZRB3047-G | 0 | Infineon | ||
12 | BZT52C24S RRG | 0 | Infineon | ||
13 | IXFR14N100Q2 | 0 | Infineon | ||
14 | 1N5290/TR | 0 | Infineon | ||
15 | HER207GHR0G | 0 | Infineon | ||
16 | SUD23N06-31-GE3 | 1942 | 600 | Infineon | |
17 | SF12G R0G | 0 | Infineon | ||
18 | RQ1C065UNTR | 0 | Infineon | ||
19 | BZD27C200PHR3 | 0 | Infineon | ||
20 | DDZX30D-13 | 0 | Infineon |