制造商 | Manufacturer | Infineon |
产品 | Product | IGBT Silicon Modules |
配置 | Configuration | Hex |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 600 V |
在25 C的连续集电极电流 | Continuous Collector Current At25C | 22 A |
封装 / 箱体 | Package_Case | EASY1 |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
封装 | Packaging | Tray |
高度 | Height | 17 mm |
长度 | Length | 45.6 mm |
技术 | Technology | Si |
宽度 | Width | 33 mm |
商标 | Brand | Infineon Technologies |
安装风格 | Mounting Style | Chassis Mount |
栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 20 V |
产品类型 | Product Type | IGBT Modules |
标准包装数量 | Standard Pack Qty | 20 |
子类别 | Subcategory | IGBTs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | BZV55B11 L1 | 0 | Infineon | ||
2 | STD25NF20 | 2307050343 | 2500 | Infineon | |
3 | DMN2020LSN-7 | 0 | Infineon | ||
4 | SMBJ5951Be3/TR13 | 0 | Infineon | ||
5 | MMBZ5242B | 7394 | Infineon | ||
6 | SS3H9-E3/57T | 1579 | Infineon | ||
7 | HS1JLHR2 | 0 | Infineon | ||
8 | DDZ11B-7 | 0 | Infineon | ||
9 | JAN1N6660DT1 | 0 | Infineon | ||
10 | VS-MBRB1645-M3 | 0 | Infineon | ||
11 | GLL4741A-E3/96 | 0 | Infineon | ||
12 | VS-150K30A | 10+ | 200 | Infineon | |
13 | ACGRC307-HF | 0 | Infineon | ||
14 | GDZ8V2B-E3-08 | 2500 | Infineon | ||
15 | RS07K-M-08 | 0 | Infineon | ||
16 | 1N4568-1/TR | 0 | Infineon | ||
17 | JAN1N4103-1/TR | 0 | Infineon | ||
18 | ABZT52C3V6-HF | 0 | Infineon | ||
19 | FDP038AN06A0 | NA | 400 | Infineon | |
20 | 2SB1275TLP | 3000 | Infineon |