制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TO-252-3 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 100 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 63 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 16 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 16 V |
Qg-栅极电荷 | Qg_Gate Charge | 34 nC |
Pd-功率耗散 | Pd_Power Dissipation | 140 W |
资格 | Qualification | AEC-Q101 |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
配置 | Configuration | Single |
高度 | Height | 2.3 mm |
长度 | Length | 6.5 mm |
晶体管类型 | Transistor Type | 1 N-Channel |
宽度 | Width | 6.22 mm |
商标 | Brand | Infineon Technologies |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 3000 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 1N5994C | 0 | Infineon | ||
2 | RGL41G-E3/97 | 0 | Infineon | ||
3 | RW1E015RPT2R | 0 | Infineon | ||
4 | MAT14ARZ-RL | 0 | Infineon | ||
5 | TS6P04G | 0 | Infineon | ||
6 | Jantx2N2905AL | 0 | Infineon | ||
7 | BZX84C10-E3-08 | 0 | Infineon | ||
8 | TZQ5223B-GS18 | 0 | Infineon | ||
9 | SS34L R2G | 0 | Infineon | ||
10 | 1SMA4739 R3G | 0 | Infineon | ||
11 | JAN1N5802US | 0 | Infineon | ||
12 | SMBJ5374C/TR13 | 0 | Infineon | ||
13 | JAN1N5302UR-1/TR | 0 | Infineon | ||
14 | BUK9M35-80EX | n/a | 1500 | Infineon | |
15 | RS1JFA | 0 | Infineon | ||
16 | 2SD1816S-TL-E | 0 | Infineon | ||
17 | US6U37TR | 0 | Infineon | ||
18 | JANTXV1N972B-1/TR | 0 | Infineon | ||
19 | MBRF15100CT C0 | 0 | Infineon | ||
20 | 1N5368Be3/TR13 | 0 | Infineon |