制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TO-252-3 |
晶体管极性 | Transistor Polarity | N-Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 60 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 79 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 8.4 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
Qg-栅极电荷 | Qg_Gate Charge | 46 nC |
Pd-功率耗散 | Pd_Power Dissipation | 110 W |
资格 | Qualification | AEC-Q101 |
封装 | Packaging | Tube |
高度 | Height | 2.3 mm |
长度 | Length | 6.5 mm |
宽度 | Width | 6.22 mm |
商标 | Brand | Infineon / IR |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 2SB1707TL | NA | 100 | Infineon | |
2 | MMBZ4695-HE3-18 | 0 | Infineon | ||
3 | NSR0115CQP6T5G | 0 | Infineon | ||
4 | 1N5616US/TR | 0 | Infineon | ||
5 | STTH15L06D | 0 | Infineon | ||
6 | PMEG10030ELPX | 8000 | Infineon | ||
7 | SS13 R2 | 0 | Infineon | ||
8 | MMBZ5234B-7-F | 2年内 | 1284 | Infineon | |
9 | 1N4764 G | 0 | Infineon | ||
10 | FR20BR02 | 0 | Infineon | ||
11 | JAN1N986B-1/TR | 0 | Infineon | ||
12 | BSO150N03MDGXUMA1 | 0 | Infineon | ||
13 | BAT6405E6327HTSA1 | n/a | 19314 | Infineon | |
14 | JANTX1N758DUR-1/TR | 0 | Infineon | ||
15 | JANTXV2N3501UB | 0 | Infineon | ||
16 | DF202ST-G | 0 | Infineon | ||
17 | RBR3L40BTE25 | 0 | Infineon | ||
18 | MMSZ5225B-G3-18 | 0 | Infineon | ||
19 | APT40GR120B2D30 | 0 | Infineon | ||
20 | STP26N65DM2 | 19+ | 2000 | Infineon |