制造商 | Manufacturer | Microchip |
RoHS | Rohs | Y |
产品 | Product | IGBT Silicon Modules |
配置 | Configuration | Single |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 1.2 kV |
集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | 3.5 V |
在25 C的连续集电极电流 | Continuous Collector Current At25C | 170 A |
栅极—射极漏泄电流 | Gate_Emitter Leakage Current | 250 nA |
Pd-功率耗散 | Pd_Power Dissipation | 962 W |
封装 / 箱体 | Package_Case | TO-264-3 |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
封装 | Packaging | Tube |
技术 | Technology | Si |
商标 | Brand | Microchip / Microsemi |
安装风格 | Mounting Style | Through Hole |
栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 30 V |
产品类型 | Product Type | IGBT Modules |
标准包装数量 | Standard Pack Qty | 1 |
子类别 | Subcategory | IGBTs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | DMP2075UFDB-7 | 0 | Microchip | ||
2 | BSP135 H6327 | 19+ | 1000 | Microchip | |
3 | 2N881 PBFREE | 0 | Microchip | ||
4 | TSF20L120C C0G | 0 | Microchip | ||
5 | VS-43CTQ100STRR-M3 | 0 | Microchip | ||
6 | FDPC8014S | 25 | Microchip | ||
7 | 1N5711UR-1/TR | 0 | Microchip | ||
8 | VS-4EVH02-M3/I | 0 | Microchip | ||
9 | MUR8L60HC0 | 0 | Microchip | ||
10 | NVH4L080N120SC1 | 2307050133 | 2500 | Microchip | |
11 | SB2M-M3/5BT | 0 | Microchip | ||
12 | BA157G-K A0G | 0 | Microchip | ||
13 | VBO30-12NO7 | 0 | Microchip | ||
14 | SQ9945BEY-T1_BE3 | 0 | Microchip | ||
15 | VS-6FL40S02 | 0 | Microchip | ||
16 | SP001058824 | 954 | Microchip | ||
17 | DMP3130LQ-7 | n/a | 60000 | Microchip | |
18 | SS8P3CL-M3/87A | 0 | Microchip | ||
19 | 1N5257B BK PBFREE | 0 | Microchip | ||
20 | JAN1N4101UR-1 | 0 | Microchip |