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APT25GP120BDQ1G
国内现货
今日价格:
价格走势图 >
名称：APT25GP120BDQ1G
品牌：Microchip
说明：IGBT 晶体管 FG, IGBT, 1200V, TO-247, RoHS
系列：
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | Microchip |
| RoHS | Rohs | Y |
| 技术 | Technology | Si |
| 封装 / 箱体 | Package_Case | TO-247-3 |
| 安装风格 | Mounting Style | Through Hole |
| 配置 | Configuration | Single |
| 集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 1.2 kV |
| 集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | 3.3 V |
| 栅极/发射极最大电压 | Maximum Gate Emitter Voltage | 30 V |
| 在25 C的连续集电极电流 | Continuous Collector Current At25C | 69 A |
| Pd-功率耗散 | Pd_Power Dissipation | 417 W |
| 最小工作温度 | Minimum Operating Temperature | - 55 C |
| 最大工作温度 | Maximum Operating Temperature | + 150 C |
| 封装 | Packaging | Tube |
| 集电极最大连续电流 Ic | Continuous Collector Current Ic Max | 69 A |
| 高度 | Height | 5.31 mm |
| 长度 | Length | 21.46 mm |
| 工作温度范围 | Operating Temperature Range | - 55 C to + 150 C |
| 宽度 | Width | 16.26 mm |
| 商标 | Brand | Microchip / Microsemi |
| 集电极连续电流 | Continuous Collector Current | 69 A |
| 栅极—射极漏泄电流 | Gate_Emitter Leakage Current | 100 nA |
| 产品类型 | Product Type | IGBT Transistors |
| 标准包装数量 | Standard Pack Qty | 1 |
| 子类别 | Subcategory | IGBTs |
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