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2SC6026CT-GR
国内现货
今日价格:
价格走势图 >
名称：2SC6026CT-GR
品牌：Toshiba
说明：双极晶体管 - 双极结型晶体管(BJT) 100mA 50V
系列：2SC6026CT
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | Toshiba |
| RoHS | Rohs | N |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | FSM-3 |
| 晶体管极性 | Transistor Polarity | NPN |
| 配置 | Configuration | Single |
| 集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 50 V |
| 集电极—基极电压 VCBO | Collector_Base Voltage Vcbo | 60 V |
| 发射极 - 基极电压 VEBO | Emitter_Base Voltage Vebo | 5 V |
| Pd-功率耗散 | Pd_Power Dissipation | 50 mW |
| 增益带宽产品fT | Gain Bandwidth Product Ft | 60 MHz |
| 系列 | Series | 2SC6026CT |
| 封装 | Packaging | Reel |
| 直流电流增益 hFE 最大值 | Dc Current Gain Hfe Max | 400 |
| 高度 | Height | 0.48 mm |
| 长度 | Length | 0.6 mm |
| 技术 | Technology | Si |
| 宽度 | Width | 0.8 mm |
| 商标 | Brand | Toshiba |
| 集电极连续电流 | Continuous Collector Current | 100 mA |
| 直流集电极/Base Gain hfe Min | Dc Collector_Base Gain Hfe Min | 120 |
| 产品类型 | Product Type | BJTs - Bipolar Transistors |
| 标准包装数量 | Standard Pack Qty | 10000 |
| 子类别 | Subcategory | Transistors |
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| 18 | 1N5821RLG | 0 | Toshiba | ||
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