制造商 |
Manufacturer |
ON Semiconductor |
RoHS |
Rohs |
Y |
安装风格 |
Mounting Style |
Through Hole |
封装 / 箱体 |
Package_Case |
TO-220-3 |
晶体管极性 |
Transistor Polarity |
PNP |
配置 |
Configuration |
Single |
集电极—发射极最大电压 VCEO |
Collector_Emitter Voltage Vceo Max |
50 V |
集电极—基极电压 VCBO |
Collector_Base Voltage Vcbo |
60 V |
发射极 - 基极电压 VEBO |
Emitter_Base Voltage Vebo |
5 V |
集电极—射极饱和电压 |
Collector_Emitter Saturation Voltage |
3.5 V |
最大直流电集电极电流 |
Maximum Dc Collector Current |
7 A |
Pd-功率耗散 |
Pd_Power Dissipation |
40 W |
增益带宽产品fT |
Gain Bandwidth Product Ft |
10 MHz |
最小工作温度 |
Minimum Operating Temperature |
- 65 C |
最大工作温度 |
Maximum Operating Temperature |
+ 150 C |
系列 |
Series |
2N6109 |
封装 |
Packaging |
Tube |
高度 |
Height |
15.75 mm |
长度 |
Length |
10.53 mm |
技术 |
Technology |
Si |
宽度 |
Width |
4.83 mm |
商标 |
Brand |
ON Semiconductor |
集电极连续电流 |
Continuous Collector Current |
7 A |
直流集电极/Base Gain hfe Min |
Dc Collector_Base Gain Hfe Min |
30 |
产品类型 |
Product Type |
BJTs - Bipolar Transistors |
标准包装数量 |
Standard Pack Qty |
50 |
子类别 |
Subcategory |
Transistors |