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规格参数
价格走势
| 制造商 | Manufacturer | Microchip |
| RoHS | Rohs | N |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | SMD-3 |
| 晶体管极性 | Transistor Polarity | NPN |
| 配置 | Configuration | Single |
| 集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 80 V |
| 集电极—基极电压 VCBO | Collector_Base Voltage Vcbo | 100 V |
| 发射极 - 基极电压 VEBO | Emitter_Base Voltage Vebo | 5.5 V |
| 集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | 1.5 V |
| Pd-功率耗散 | Pd_Power Dissipation | 1.16 W |
| 增益带宽产品fT | Gain Bandwidth Product Ft | - |
| 最小工作温度 | Minimum Operating Temperature | - 65 C |
| 最大工作温度 | Maximum Operating Temperature | + 200 C |
| 封装 | Packaging | Tray |
| 直流电流增益 hFE 最大值 | Dc Current Gain Hfe Max | 90 |
| 技术 | Technology | Si |
| 商标 | Brand | Microchip / Microsemi |
| 集电极连续电流 | Continuous Collector Current | 2 A |
| 直流集电极/Base Gain hfe Min | Dc Collector_Base Gain Hfe Min | 50 |
| 产品类型 | Product Type | BJTs - Bipolar Transistors |
| 标准包装数量 | Standard Pack Qty | 1 |
| 子类别 | Subcategory | Transistors |
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