制造商 | Manufacturer | Comchip Technology |
RoHS | Rohs | Y |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | TO-92-3 |
晶体管极性 | Transistor Polarity | PNP |
配置 | Configuration | Single |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | - 40 V |
集电极—基极电压 VCBO | Collector_Base Voltage Vcbo | - 40 V |
发射极 - 基极电压 VEBO | Emitter_Base Voltage Vebo | - 5 V |
集电极—射极饱和电压 | Collector_Emitter Saturation Voltage | - 400 mV |
最大直流电集电极电流 | Maximum Dc Collector Current | - 0.2 A |
Pd-功率耗散 | Pd_Power Dissipation | 625 mW |
增益带宽产品fT | Gain Bandwidth Product Ft | 250 MHz |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
系列 | Series | 2N3906 |
封装 | Packaging | Bulk |
直流电流增益 hFE 最大值 | Dc Current Gain Hfe Max | 400 |
技术 | Technology | Si |
商标 | Brand | Comchip Technology |
直流集电极/Base Gain hfe Min | Dc Collector_Base Gain Hfe Min | 30 |
产品类型 | Product Type | BJTs - Bipolar Transistors |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Transistors |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 1N5539B | 0 | Comchip Technology | ||
2 | HER205GHR0 | 0 | Comchip Technology | ||
3 | TT410-13 | 0 | Comchip Technology | ||
4 | IPD30N08S2-22 | 0 | Comchip Technology | ||
5 | FM5820-W | 0 | Comchip Technology | ||
6 | BZT52B10-G3-08 | 0 | Comchip Technology | ||
7 | BAT54C-G3-18 | 0 | Comchip Technology | ||
8 | RN2115,LF(CT | 0 | Comchip Technology | ||
9 | RDBLS207G C1G | 0 | Comchip Technology | ||
10 | 3EZ18D10e3/TR12 | 0 | Comchip Technology | ||
11 | VBO78-12NO7 | 0 | Comchip Technology | ||
12 | JANTX1N6343US | 0 | Comchip Technology | ||
13 | STF11NM50N | 17+/18+ | 1550 | Comchip Technology | |
14 | IPA60R210CFD7XKSA1 | 0 | Comchip Technology | ||
15 | 6MS30017E43W34404NOSA1 | 0 | Comchip Technology | ||
16 | VS-GBPC2510A | 0 | Comchip Technology | ||
17 | JANTXV1N5804US/TR | 0 | Comchip Technology | ||
18 | S2BHE3_A/I | 0 | Comchip Technology | ||
19 | VS-2EMH01-M3/5AT | 0 | Comchip Technology | ||
20 | JAN1N6319 | 0 | Comchip Technology |