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TK31N60W,S1VF 国内现货
今日价格: 价格走势图 >
名称:TK31N60W,S1VF
品牌:Toshiba
说明:MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
系列:TK31N60W
货期:两周
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规格参数
价格走势
制造商 Manufacturer Toshiba
RoHS Rohs Y
技术 Technology Si
安装风格 Mounting Style Through Hole
封装 / 箱体 Package_Case TO-247-3
晶体管极性 Transistor Polarity N-Channel
通道数量 Number Of Channels 1 Channel
Vds-漏源极击穿电压 Vds_Drain_Source Breakdown Voltage 600 V
Id-连续漏极电流 Id_Continuous Drain Current 30.8 A
Rds On-漏源导通电阻 Rds On_Drain_Source Resistance 73 mOhms
Vgs - 栅极-源极电压 Vgs_Gate_Source Voltage 30 V
Vgs th-栅源极阈值电压 Vgs Th_Gate_Source Threshold Voltage 3.7 V
Qg-栅极电荷 Qg_Gate Charge 86 nC
最小工作温度 Minimum Operating Temperature - 55 C
最大工作温度 Maximum Operating Temperature + 150 C
Pd-功率耗散 Pd_Power Dissipation 230 W
通道模式 Channel Mode Enhancement
商标名 Tradename DTMOSIV
封装 Packaging Tube
配置 Configuration Single
高度 Height 20.95 mm
长度 Length 15.94 mm
系列 Series TK31N60W
晶体管类型 Transistor Type 1 N-Channel
宽度 Width 5.02 mm
商标 Brand Toshiba
下降时间 Fall Time 8.5 ns
产品类型 Product Type MOSFET
上升时间 Rise Time 32 ns
标准包装数量 Standard Pack Qty 30
子类别 Subcategory MOSFETs
典型关闭延迟时间 Typical Turn_Off Delay Time 165 ns
典型接通延迟时间 Typical Turn_On Delay Time 70 ns
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