制造商 | Manufacturer | Toshiba |
RoHS | Rohs | Y |
技术 | Technology | Si |
安装风格 | Mounting Style | Through Hole |
封装 / 箱体 | Package_Case | TO-220-3 |
晶体管极性 | Transistor Polarity | N-Channel |
通道数量 | Number Of Channels | 1 Channel |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 500 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 18 A |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 270 mOhms |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 30 V |
Qg-栅极电荷 | Qg_Gate Charge | 45 nC |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
Pd-功率耗散 | Pd_Power Dissipation | 50 W |
通道模式 | Channel Mode | Enhancement |
商标名 | Tradename | MOSVII |
封装 | Packaging | Tube |
配置 | Configuration | Single |
高度 | Height | 15 mm |
长度 | Length | 10 mm |
系列 | Series | TK18A50D |
晶体管类型 | Transistor Type | 1 N-Channel |
宽度 | Width | 4.5 mm |
商标 | Brand | Toshiba |
产品类型 | Product Type | MOSFET |
标准包装数量 | Standard Pack Qty | 50 |
子类别 | Subcategory | MOSFETs |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | JANTX1N6489US | 0 | Toshiba | ||
2 | DTA114TCAT116 | 0 | Toshiba | ||
3 | RS1GLHR3G | 0 | Toshiba | ||
4 | RS2003M | 0 | Toshiba | ||
5 | RB161MM-20TR | n/a | 58571 | Toshiba | |
6 | 2M30ZHR0 | 0 | Toshiba | ||
7 | 1N4477US | 0 | Toshiba | ||
8 | DZ23C11-HE3-08 | 0 | Toshiba | ||
9 | 1N3644 | 0 | Toshiba | ||
10 | SZMMSZ8V2ET1G | 0 | Toshiba | ||
11 | Jantxv2N6249 | 0 | Toshiba | ||
12 | SSM6N40TU,LF | 0 | Toshiba | ||
13 | IXTQ72N30T | 0 | Toshiba | ||
14 | FQP7N20 | 0 | Toshiba | ||
15 | APTGT200DU120G | 0 | Toshiba | ||
16 | FR20KR05 | 0 | Toshiba | ||
17 | LXA16T600C | 0 | Toshiba | ||
18 | IKB10N60T | 0 | Toshiba | ||
19 | 1N3311B | 0 | Toshiba | ||
20 | 1N6000B TR PBFREE | 0 | Toshiba |