制造商 |
Manufacturer |
Qorvo |
RoHS |
Rohs |
Y |
晶体管类型 |
Transistor Type |
pHEMT |
技术 |
Technology |
GaAs |
增益 |
Gain |
11.5 dB |
Vds-漏源极击穿电压 |
Vds_Drain_Source Breakdown Voltage |
12 V |
Vgs-栅源极击穿电压 |
Vgs_Gate_Source Breakdown Voltage |
- 7 V |
Id-连续漏极电流 |
Id_Continuous Drain Current |
259 mA |
最大漏极/栅极电压 |
Maximum Drain Gate Voltage |
- 12 V |
最小工作温度 |
Minimum Operating Temperature |
- 65 C |
最大工作温度 |
Maximum Operating Temperature |
+ 150 C |
Pd-功率耗散 |
Pd_Power Dissipation |
4.2 W |
安装风格 |
Mounting Style |
SMD/SMT |
封装 / 箱体 |
Package_Case |
DIE |
封装 |
Packaging |
Gel Pack |
配置 |
Configuration |
Dual |
工作频率 |
Operating Frequency |
12 GHz |
工作温度范围 |
Operating Temperature Range |
- 65 C to + 150 C |
产品 |
Product |
RF JFET |
系列 |
Series |
TGF |
类型 |
Type |
GaAs pHEMT |
商标 |
Brand |
Qorvo |
正向跨导 - 最小值 |
Forward Transconductance_Min |
309 mS |
通道数量 |
Number Of Channels |
2 Channel |
P1dB - 压缩点 |
P1Db_Compression Point |
29.5 dBm |
产品类型 |
Product Type |
RF JFET Transistors |
标准包装数量 |
Standard Pack Qty |
100 |
子类别 |
Subcategory |
Transistors |