制造商 | Manufacturer | Qorvo |
RoHS | Rohs | Y |
晶体管类型 | Transistor Type | HEMT |
技术 | Technology | GaN SiC |
增益 | Gain | 7.8 dB |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 145 V |
Id-连续漏极电流 | Id_Continuous Drain Current | 11 A |
输出功率 | Output Power | 30.4 W |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
Pd-功率耗散 | Pd_Power Dissipation | 78 W |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | 7 mm x 7 mm |
封装 | Packaging | Cut Tape |
封装 | Packaging | Reel |
应用 | Application | Civilian and Military Radar |
配置 | Configuration | Single |
工作频率 | Operating Frequency | 9.2 GHz to 9.7 GHz |
商标 | Brand | Qorvo |
开发套件 | Development Kit | QPD9300EVB3 |
产品类型 | Product Type | RF JFET Transistors |
标准包装数量 | Standard Pack Qty | 100 |
子类别 | Subcategory | Transistors |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | HMC435AMS8GETR | 2年内 | 17500 | Qorvo | |
2 | MAAM-011139-TR1000 | 0 | Qorvo | ||
3 | CZ8130 | 0 | Qorvo | ||
4 | A3I35D012WGNR1 | 0 | Qorvo | ||
5 | XM0860SH-DL0612 | 0 | Qorvo | ||
6 | RF37S114HTFJB | 0 | Qorvo | ||
7 | V680-D1KP53M | 0 | Qorvo | ||
8 | CDCF5801DBQ | 0 | Qorvo | ||
9 | M88 | 0 | Qorvo | ||
10 | TRF370333IRGET | 750 | Qorvo | ||
11 | MRF10502 | 0 | Qorvo | ||
12 | PIC12LF1840T39A-I/ST | 0 | Qorvo | ||
13 | RFFM8292TR7 | 0 | Qorvo | ||
14 | HMC579 | 2年内 | 1000 | Qorvo | |
15 | SMA77 | 0 | Qorvo | ||
16 | EZR32WG230F64R61G-B0R | 0 | Qorvo | ||
17 | STAC4932B | 0 | Qorvo | ||
18 | MAAMSS0042SMB | 0 | Qorvo | ||
19 | SKY13567-666LF | 0 | Qorvo | ||
20 | Z16C3220VSG | 0 | Qorvo |