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QPD1823
国内现货
今日价格:
价格走势图 >
名称：QPD1823
品牌：Qorvo
说明：射频结栅场效应晶体管(RF JFET)晶体管 1.8-2.4GHz GaN 220W 48V
系列：QPD
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | Qorvo |
| RoHS | Rohs | Y |
| 晶体管类型 | Transistor Type | HEMT |
| 技术 | Technology | GaN SiC |
| 增益 | Gain | 21 dB |
| 晶体管极性 | Transistor Polarity | N-Channel |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | - |
| Vgs-栅源极击穿电压 | Vgs_Gate_Source Breakdown Voltage | - |
| Id-连续漏极电流 | Id_Continuous Drain Current | - |
| 输出功率 | Output Power | 220 W |
| 最大漏极/栅极电压 | Maximum Drain Gate Voltage | - |
| 最小工作温度 | Minimum Operating Temperature | - 40 C |
| Pd-功率耗散 | Pd_Power Dissipation | - |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | NI400-2 |
| 封装 | Packaging | Tray |
| 应用 | Application | Microcell Base Station, W-CDMA / LTE |
| 配置 | Configuration | Single |
| 工作频率 | Operating Frequency | 1.8 GHz to 2.4 GHz |
| 系列 | Series | QPD |
| 商标 | Brand | Qorvo |
| 正向跨导 - 最小值 | Forward Transconductance_Min | - |
| 产品类型 | Product Type | RF JFET Transistors |
| 标准包装数量 | Standard Pack Qty | 250 |
| 子类别 | Subcategory | Transistors |
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