制造商 | Manufacturer | Cree, Inc. |
RoHS | Rohs | Y |
晶体管极性 | Transistor Polarity | Dual N-Channel |
技术 | Technology | Si |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 65 V |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 800 mOhms |
输出功率 | Output Power | 60 W |
最大工作温度 | Maximum Operating Temperature | + 225 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | H-37248-4 |
封装 | Packaging | Reel |
工作频率 | Operating Frequency | 2620 MHz to 2690 MHz |
类型 | Type | RF Power MOSFET |
商标 | Brand | Wolfspeed / Cree |
通道数量 | Number Of Channels | 2 Channel |
产品类型 | Product Type | RF MOSFET Transistors |
标准包装数量 | Standard Pack Qty | 250 |
子类别 | Subcategory | MOSFETs |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 10 V |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | EFR32FG1P131F256GM32-C0R | NA | 0 | Cree, Inc. | |
2 | EM250-RTR | 86488 | Cree, Inc. | ||
3 | MAX2900ETI+T | 0 | Cree, Inc. | ||
4 | TQP3M9018 | 0 | Cree, Inc. | ||
5 | RFPA5201ESR | 0 | Cree, Inc. | ||
6 | QPA9127TR7 | 0 | Cree, Inc. | ||
7 | PAT0510S-C-10DB-T10 | 0 | Cree, Inc. | ||
8 | ST25DV16K-IER6T3 | n/a | 32000 | Cree, Inc. | |
9 | TGA2623 | 0 | Cree, Inc. | ||
10 | PXV1220S-5DBN6-T | 0 | Cree, Inc. | ||
11 | AXM0F243-1-TX40 | 7950 | Cree, Inc. | ||
12 | NJG1655ME7-TE1 | 0 | Cree, Inc. | ||
13 | HMC457QS16GETR | 0 | Cree, Inc. | ||
14 | DSG9500-000 | 0 | Cree, Inc. | ||
15 | ISM4343-WB-L151 | 0 | Cree, Inc. | ||
16 | SE5007BT-R | 0 | Cree, Inc. | ||
17 | SI4761-A42-AMR | 0 | Cree, Inc. | ||
18 | 8V97051ANLGI8 | 0 | Cree, Inc. | ||
19 | ZX60-100VHX+ | 0 | Cree, Inc. | ||
20 | HMC493LP3 | 0 | Cree, Inc. |