制造商 | Manufacturer | Cree, Inc. |
RoHS | Rohs | Y |
晶体管极性 | Transistor Polarity | N-Channel |
技术 | Technology | Si |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 105 V |
Rds On-漏源导通电阻 | Rds On_Drain_Source Resistance | 340 mOhms |
增益 | Gain | 18.5 dB |
输出功率 | Output Power | 200 W |
最大工作温度 | Maximum Operating Temperature | + 225 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | H-36265-2 |
封装 | Packaging | Reel |
工作频率 | Operating Frequency | 960 MHz to 1600 MHz |
类型 | Type | RF Power MOSFET |
商标 | Brand | Wolfspeed / Cree |
通道数量 | Number Of Channels | 1 Channel |
产品类型 | Product Type | RF MOSFET Transistors |
标准包装数量 | Standard Pack Qty | 250 |
子类别 | Subcategory | MOSFETs |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 10 V |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MF1S7030XDA4/V1J | 0 | Cree, Inc. | ||
2 | QPD2730 | 0 | Cree, Inc. | ||
3 | HMC263LP4ETR | 0 | Cree, Inc. | ||
4 | HMC407MS8G | 0 | Cree, Inc. | ||
5 | CS2000P-CZZR | 0 | Cree, Inc. | ||
6 | TDA5211 | 0 | Cree, Inc. | ||
7 | EFR32MG21A010F768IM32-B | 0 | Cree, Inc. | ||
8 | CY8C4128FNI-BL553T | 0 | Cree, Inc. | ||
9 | HMC490LP5ETR | 0 | Cree, Inc. | ||
10 | MAX7060ATG+ | 0 | Cree, Inc. | ||
11 | nRF9E5 | 0 | Cree, Inc. | ||
12 | BAR6302LE6327XTMA1 | 15000 | Cree, Inc. | ||
13 | EZR32HG320F32R63G-B0R | 0 | Cree, Inc. | ||
14 | LEE-39+ | 0 | Cree, Inc. | ||
15 | MAX7032ATJ+ | 0 | Cree, Inc. | ||
16 | UM4306A | 0 | Cree, Inc. | ||
17 | SMA18-1 | 0 | Cree, Inc. | ||
18 | M93 | 0 | Cree, Inc. | ||
19 | CC3220SF12ARGKR | 10000 | Cree, Inc. | ||
20 | AD9361BBCZ-REEL | 0 | Cree, Inc. |