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PD57030S-E
国内现货
今日价格:
价格走势图 >
名称：PD57030S-E
品牌：STMicroelectronics
说明：射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
系列：PD57030-E
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | STMicroelectronics |
| RoHS | Rohs | Y |
| 晶体管极性 | Transistor Polarity | N-Channel |
| 技术 | Technology | Si |
| Id-连续漏极电流 | Id_Continuous Drain Current | 4 A |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 65 V |
| 增益 | Gain | 14 dB |
| 输出功率 | Output Power | 30 W |
| 最小工作温度 | Minimum Operating Temperature | - 65 C |
| 最大工作温度 | Maximum Operating Temperature | + 150 C |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | PowerSO-10RF-Straight-4 |
| 封装 | Packaging | Tube |
| 配置 | Configuration | Single |
| 高度 | Height | 3.5 mm |
| 长度 | Length | 7.5 mm |
| 工作频率 | Operating Frequency | 1 GHz |
| 系列 | Series | PD57030-E |
| 类型 | Type | RF Power MOSFET |
| 宽度 | Width | 9.4 mm |
| 商标 | Brand | STMicroelectronics |
| 通道模式 | Channel Mode | Enhancement |
| 湿度敏感性 | Moisture Sensitive | Yes |
| Pd-功率耗散 | Pd_Power Dissipation | 52.8 W |
| 产品类型 | Product Type | RF MOSFET Transistors |
| 标准包装数量 | Standard Pack Qty | 400 |
| 子类别 | Subcategory | MOSFETs |
| Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | 20 V |
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