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MRFG35003N6AT1
国内现货
今日价格:
价格走势图 >
名称：MRFG35003N6AT1
品牌：NXP
说明：射频结栅场效应晶体管(RF JFET)晶体管 3.5GHZ 3W 6V GAAS PLD1.5
系列：MRFG35003N6AT1
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | NXP |
| RoHS | Rohs | E |
| 晶体管类型 | Transistor Type | pHEMT |
| 技术 | Technology | GaAs |
| 增益 | Gain | 10 dB |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 8 V |
| Vgs-栅源极击穿电压 | Vgs_Gate_Source Breakdown Voltage | - 5 V |
| Id-连续漏极电流 | Id_Continuous Drain Current | 2.9 A |
| 最大工作温度 | Maximum Operating Temperature | + 85 C |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | PLD-1.5 |
| 封装 | Packaging | Cut Tape |
| 封装 | Packaging | MouseReel |
| 封装 | Packaging | Reel |
| 配置 | Configuration | Single Dual Source |
| 工作频率 | Operating Frequency | 3.55 GHz |
| 产品 | Product | RF JFET |
| 系列 | Series | MRFG35003N6AT1 |
| 类型 | Type | GaAs pHEMT |
| 商标 | Brand | NXP Semiconductors |
| 湿度敏感性 | Moisture Sensitive | Yes |
| P1dB - 压缩点 | P1Db_Compression Point | 3 W |
| 产品类型 | Product Type | RF JFET Transistors |
| 标准包装数量 | Standard Pack Qty | 1000 |
| 子类别 | Subcategory | Transistors |
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