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MRFE8VP8600HSR5
国内现货
今日价格:
价格走势图 >
名称：MRFE8VP8600HSR5
品牌：NXP
说明：射频金属氧化物半导体场效应(RF MOSFET)晶体管 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
系列：MRFE8VP8600H
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | NXP |
| RoHS | Rohs | Y |
| 晶体管极性 | Transistor Polarity | Dual N-Channel |
| 技术 | Technology | Si |
| Id-连续漏极电流 | Id_Continuous Drain Current | 2.8 A |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | - 500 mV, 115 V |
| 增益 | Gain | 21 dB |
| 输出功率 | Output Power | 140 W |
| 最小工作温度 | Minimum Operating Temperature | - 40 C |
| 最大工作温度 | Maximum Operating Temperature | + 150 C |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | NI-1230S-4S |
| 封装 | Packaging | Reel |
| 工作频率 | Operating Frequency | 470 MHz to 860 MHz |
| 系列 | Series | MRFE8VP8600H |
| 类型 | Type | RF Power MOSFET |
| 商标 | Brand | NXP Semiconductors |
| 通道数量 | Number Of Channels | 2 Channel |
| Pd-功率耗散 | Pd_Power Dissipation | 1.25 kW |
| 产品类型 | Product Type | RF MOSFET Transistors |
| 标准包装数量 | Standard Pack Qty | 50 |
| 子类别 | Subcategory | MOSFETs |
| Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | - 6 V, 10 V |
| Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 1.3 V |
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