制造商 |
Manufacturer |
Cree, Inc. |
RoHS |
Rohs |
Y |
晶体管类型 |
Transistor Type |
HEMT |
技术 |
Technology |
GaN |
增益 |
Gain |
18.5 dB |
晶体管极性 |
Transistor Polarity |
N-Channel |
Vds-漏源极击穿电压 |
Vds_Drain_Source Breakdown Voltage |
150 V |
Vgs-栅源极击穿电压 |
Vgs_Gate_Source Breakdown Voltage |
- 10 V to 2 V |
Id-连续漏极电流 |
Id_Continuous Drain Current |
6.3 A |
输出功率 |
Output Power |
60 W |
最大漏极/栅极电压 |
Maximum Drain Gate Voltage |
- |
最小工作温度 |
Minimum Operating Temperature |
- 40 C |
最大工作温度 |
Maximum Operating Temperature |
+ 90 C |
Pd-功率耗散 |
Pd_Power Dissipation |
- |
安装风格 |
Mounting Style |
SMD/SMT |
封装 / 箱体 |
Package_Case |
QSOP-20 |
封装 |
Packaging |
Cut Tape |
封装 |
Packaging |
MouseReel |
封装 |
Packaging |
Reel |
应用 |
Application |
- |
配置 |
Configuration |
Single |
工作频率 |
Operating Frequency |
2.7 GHz |
工作温度范围 |
Operating Temperature Range |
- 40 C to + 90 C |
商标 |
Brand |
Wolfspeed / Cree |
正向跨导 - 最小值 |
Forward Transconductance_Min |
- |
闸/源截止电压 |
Gate_Source Cutoff Voltage |
- |
类 |
Class |
- |
湿度敏感性 |
Moisture Sensitive |
Yes |
NF—噪声系数 |
Nf_Noise Figure |
- |
P1dB - 压缩点 |
P1Db_Compression Point |
- |
产品类型 |
Product Type |
RF JFET Transistors |
Rds On-漏源导通电阻 |
Rds On_Drain_Source Resistance |
- |
标准包装数量 |
Standard Pack Qty |
250 |
子类别 |
Subcategory |
Transistors |
Vgs th-栅源极阈值电压 |
Vgs Th_Gate_Source Threshold Voltage |
- 3 V |