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CGH35030F
国内现货
今日价格:
价格走势图 >
名称：CGH35030F
品牌：Cree, Inc.
说明：射频结栅场效应晶体管(RF JFET)晶体管 30W, GaN HEMT, 28V, DC-6.0GHz, Flange
系列：
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | Cree, Inc. |
| 晶体管类型 | Transistor Type | HEMT |
| 技术 | Technology | GaN |
| 增益 | Gain | 12 dB |
| 晶体管极性 | Transistor Polarity | N-Channel |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | 120 V |
| Vgs-栅源极击穿电压 | Vgs_Gate_Source Breakdown Voltage | - 10 V, 2 V |
| Id-连续漏极电流 | Id_Continuous Drain Current | 3 A |
| 输出功率 | Output Power | 30 W |
| 最大漏极/栅极电压 | Maximum Drain Gate Voltage | - |
| 最小工作温度 | Minimum Operating Temperature | - 40 C |
| 最大工作温度 | Maximum Operating Temperature | + 150 C |
| Pd-功率耗散 | Pd_Power Dissipation | 14 W |
| 安装风格 | Mounting Style | Flange Mount |
| 封装 / 箱体 | Package_Case | 440166 |
| 应用 | Application | General Purpose |
| 工作频率 | Operating Frequency | 3.3 GHz to 3.9 GHz |
| 商标 | Brand | Cree, Inc. |
| 正向跨导 - 最小值 | Forward Transconductance_Min | - |
| 产品类型 | Product Type | RF JFET Transistors |
| 标准包装数量 | Standard Pack Qty | 50 |
| 子类别 | Subcategory | Transistors |
| Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | - 3 V |
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