制造商 | Manufacturer | Infineon |
RoHS | Rohs | Y |
系列 | Series | BFP842 |
晶体管类型 | Transistor Type | Bipolar |
技术 | Technology | SiGe |
集电极—发射极最大电压 VCEO | Collector_Emitter Voltage Vceo Max | 3.25 V |
发射极 - 基极电压 VEBO | Emitter_Base Voltage Vebo | 4.1 V |
集电极连续电流 | Continuous Collector Current | 40 mA |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | SOT-343-4 |
封装 | Packaging | Cut Tape |
封装 | Packaging | MouseReel |
封装 | Packaging | Reel |
直流电流增益 hFE 最大值 | Dc Current Gain Hfe Max | 450 |
工作频率 | Operating Frequency | 60 GHz |
类型 | Type | RF Silicon Germanium |
商标 | Brand | Infineon Technologies |
Pd-功率耗散 | Pd_Power Dissipation | 120 mW |
产品类型 | Product Type | RF Bipolar Transistors |
标准包装数量 | Standard Pack Qty | 3000 |
子类别 | Subcategory | Transistors |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | TQF7059 | 五年内 | 1984 | Infineon | |
2 | CC1200RHBT | n/a | 1000 | Infineon | |
3 | AFE8220IPZPQ1 | 0 | Infineon | ||
4 | MAAP-015016-DIE | 0 | Infineon | ||
5 | SMAL7 | 0 | Infineon | ||
6 | SYM-102H+ | 0 | Infineon | ||
7 | BFR92PE6327HTSA1 | 0 | Infineon | ||
8 | ERA-33SM+ | 0 | Infineon | ||
9 | AD8302ARUZ | 30 | Infineon | ||
10 | MF1PLUS6001DUD/03, | 0 | Infineon | ||
11 | HMC129ALC4TR-R5 | 0 | Infineon | ||
12 | BA479S-TAP | 0 | Infineon | ||
13 | GALI-5F+ | 0 | Infineon | ||
14 | HMC-ABH241 | 0 | Infineon | ||
15 | MAMX-009239-001500 | 0 | Infineon | ||
16 | HMC-AUH312-SX | 0 | Infineon | ||
17 | SI4055-C2A-AMR | 0 | Infineon | ||
18 | BF1105R,215 | 0 | Infineon | ||
19 | MRF171 | 0 | Infineon | ||
20 | MAAD-007083-000100 | 0 | Infineon |