制造商 | Manufacturer | NXP |
RoHS | Rohs | Y |
晶体管极性 | Transistor Polarity | Dual N-Channel |
技术 | Technology | Si |
Id-连续漏极电流 | Id_Continuous Drain Current | 2.6 A |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | - 500 mV, 105 V |
增益 | Gain | 19.2 dB |
输出功率 | Output Power | 700 W |
最小工作温度 | Minimum Operating Temperature | - 55 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | NI-780H-4 |
封装 | Packaging | Cut Tape |
封装 | Packaging | Reel |
工作频率 | Operating Frequency | 1030 MHz to 1090 MHz |
类型 | Type | RF Power MOSFET |
商标 | Brand | NXP Semiconductors |
通道数量 | Number Of Channels | 2 Channel |
Pd-功率耗散 | Pd_Power Dissipation | 526 W |
产品类型 | Product Type | RF MOSFET Transistors |
标准包装数量 | Standard Pack Qty | 50 |
子类别 | Subcategory | MOSFETs |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | - 6 V, 10 V |
Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 1.3 V |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | LMX2487ESQ/NOPB | 0 | NXP | ||
2 | SI1033-B-GM3 | 0 | NXP | ||
3 | TH72005KLD-BAA-000-TU | 0 | NXP | ||
4 | MAAP-011027-000SMB | 0 | NXP | ||
5 | ATA8210-GHQW | 0 | NXP | ||
6 | CC1352R1F3RGZT | 0 | NXP | ||
7 | SE5012T-R | 0 | NXP | ||
8 | SI1032-B-GM3 | 0 | NXP | ||
9 | R574303305 | 0 | NXP | ||
10 | HMC700LP4ETR | 0 | NXP | ||
11 | HMC557ALC4TR-R5 | 0 | NXP | ||
12 | 74HC4046APW,118 | 0 | NXP | ||
13 | LMX2531LQX1742/NOPB | 100000 | NXP | ||
14 | MAAP-011193 | 0 | NXP | ||
15 | GRF4042 | 0 | NXP | ||
16 | NBC12439AMNG | 206 | NXP | ||
17 | SI4320-J1-FT1R | 0 | NXP | ||
18 | CMX868AD2-REEL | 0 | NXP | ||
19 | ESP32-PICO-V3 | 0 | NXP | ||
20 | BFT25,215 | 0 | NXP |