制造商 | Manufacturer | NXP |
RoHS | Rohs | Y |
晶体管极性 | Transistor Polarity | N-Channel |
技术 | Technology | Si |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | - 500 mV, 65 V |
增益 | Gain | 18.2 dB |
输出功率 | Output Power | 63 W |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | NI-880XS-2L4S |
封装 | Packaging | Reel |
配置 | Configuration | Dual |
工作频率 | Operating Frequency | 1995 MHz |
系列 | Series | AFT18S290_13S |
类型 | Type | RF Power MOSFET |
商标 | Brand | NXP Semiconductors |
通道模式 | Channel Mode | Enhancement |
Pd-功率耗散 | Pd_Power Dissipation | 263 W |
产品类型 | Product Type | RF MOSFET Transistors |
标准包装数量 | Standard Pack Qty | 250 |
子类别 | Subcategory | MOSFETs |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | - 6 V, 10 V |
Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 2 V |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MKW36A512VFP4R | 0 | NXP | ||
2 | BFP640ESDH6327XTSA1 | 0 | NXP | ||
3 | GC4602-173 | 0 | NXP | ||
4 | AD8319ACPZ-R7 | 0 | NXP | ||
5 | STA2165X2 | 0 | NXP | ||
6 | QPA2610 | 0 | NXP | ||
7 | RAC101A10-CTH | 0 | NXP | ||
8 | AS3953A-BWLT | 0 | NXP | ||
9 | NB2304AI2DG | n/a | 4969 | NXP | |
10 | HMC8119 | 0 | NXP | ||
11 | BFU550WX | 6000 | NXP | ||
12 | BFU520WX | 9000 | NXP | ||
13 | UM7306C | 0 | NXP | ||
14 | SI1013-C-GM2 | 0 | NXP | ||
15 | EFR32FG12P431F512GM68-CR | 0 | NXP | ||
16 | SI4438-B1C-FMR | 2年内 | 496 | NXP | |
17 | ADRF5545ABCPZN-RL | 0 | NXP | ||
18 | SL3S1203FUF,003 | 0 | NXP | ||
19 | MASWSS0144TR-3000 | 0 | NXP | ||
20 | HMC985ALP4KE | 0 | NXP |