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AFIC31025GNR1
国内现货
今日价格:
价格走势图 >
名称：AFIC31025GNR1
品牌：NXP
说明：射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V
系列：
货期：两周
规格参数
价格走势
| 制造商 | Manufacturer | NXP |
| 晶体管极性 | Transistor Polarity | Dual N-Channel |
| 技术 | Technology | Si |
| Id-连续漏极电流 | Id_Continuous Drain Current | 200 mA |
| Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | - 500 mV, 65 V |
| 增益 | Gain | 31.9 dB |
| 输出功率 | Output Power | 25 W |
| 最小工作温度 | Minimum Operating Temperature | - 40 C |
| 最大工作温度 | Maximum Operating Temperature | + 150 C |
| 安装风格 | Mounting Style | SMD/SMT |
| 封装 / 箱体 | Package_Case | TO-270WBG-17 |
| 封装 | Packaging | Reel |
| 工作频率 | Operating Frequency | 2400 MHz to 3100 MHz |
| 类型 | Type | RF Power MOSFET |
| 商标 | Brand | NXP Semiconductors |
| 通道数量 | Number Of Channels | 2 Channel |
| 湿度敏感性 | Moisture Sensitive | Yes |
| 产品类型 | Product Type | RF MOSFET Transistors |
| 标准包装数量 | Standard Pack Qty | 500 |
| 子类别 | Subcategory | MOSFETs |
| Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | - 0.5 V, 10 V |
| Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 0.8 V |
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