制造商 | Manufacturer | NXP |
RoHS | Rohs | Y |
晶体管极性 | Transistor Polarity | Dual N-Channel |
技术 | Technology | Si |
Id-连续漏极电流 | Id_Continuous Drain Current | 3.2 A |
Vds-漏源极击穿电压 | Vds_Drain_Source Breakdown Voltage | - 500 mV, 65 V |
增益 | Gain | 16.8 dB |
输出功率 | Output Power | 71 W |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 150 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | ACP-1230S-4L2S |
封装 | Packaging | Reel |
工作频率 | Operating Frequency | 1805 MHz to 1880 MHz |
类型 | Type | RF Power MOSFET |
商标 | Brand | NXP Semiconductors |
通道数量 | Number Of Channels | 2 Channel |
产品类型 | Product Type | RF MOSFET Transistors |
标准包装数量 | Standard Pack Qty | 150 |
子类别 | Subcategory | MOSFETs |
Vgs - 栅极-源极电压 | Vgs_Gate_Source Voltage | - 6 V, 10 V |
Vgs th-栅源极阈值电压 | Vgs Th_Gate_Source Threshold Voltage | 1.3 V |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | ADG918BCPZ-500RL7 | 0 | NXP | ||
2 | A2I09VD050NR1 | 0 | NXP | ||
3 | NT2H1611F0DTLH | 0 | NXP | ||
4 | CY8C4127FNI-BL493T | 0 | NXP | ||
5 | MN63Y1210AF | 0 | NXP | ||
6 | RFPA5512STR13 | 0 | NXP | ||
7 | EFR32BG12P132F1024GL125-CR | 0 | NXP | ||
8 | RFCM4363TR13 | 0 | NXP | ||
9 | SI4731-D50-GMR | 0 | NXP | ||
10 | PXV1220S-1DBN7-T | 0 | NXP | ||
11 | MD-149-PIN | 0 | NXP | ||
12 | VRF2944MP | 0 | NXP | ||
13 | BFY64004PZZZA1 | 0 | NXP | ||
14 | CC2640R2FTWRGZTQ1 | 2021 | 1500 | NXP | |
15 | ADF4360-8BCPZRL7 | 0 | NXP | ||
16 | SGL0622ZPCK1 | 0 | NXP | ||
17 | AT86RF231-ZU | 26748 | NXP | ||
18 | AD8315ARMZ-RL | 0 | NXP | ||
19 | SYM-25DMHW+ | 0 | NXP | ||
20 | EFR32BG12P232F512IM68-CR | 0 | NXP |