制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 256 k x 36 |
访问时间 | Access Time | 3.8 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 325 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Tray |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V67603S150 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 84 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS832218AD-250 | 0 | Renesas Electronics | ||
2 | 71V67903S75BG8 | 0 | Renesas Electronics | ||
3 | 25LC640AT-E/SN | 0 | Renesas Electronics | ||
4 | 71V3556SA150BGGI8 | 0 | Renesas Electronics | ||
5 | MT38Q50DEB10DBDXAU.Y74 | 0 | Renesas Electronics | ||
6 | RMLV0408EGSB-4S2#HA1 | n/a | 914 | Renesas Electronics | |
7 | GS8662T10BD-350I | 0 | Renesas Electronics | ||
8 | TC58CVG1S3HRAIJ | 84 1 起订 | 84 | Renesas Electronics | |
9 | CY14V101NA-BA25XIT | 0 | Renesas Electronics | ||
10 | 70V659S12BFI8 | 0 | Renesas Electronics | ||
11 | CY7C1668KV18-450BZXC | 0 | Renesas Electronics | ||
12 | IS42VM16160K-6BLI-TR | 0 | Renesas Electronics | ||
13 | 7200L12SOG8 | 0 | Renesas Electronics | ||
14 | MT29C1G12MAAIVAMD-5 IT TR | 0 | Renesas Electronics | ||
15 | S29GL128S90TFA023 | 0 | Renesas Electronics | ||
16 | S26KS512SDPBHA023 | 0 | Renesas Electronics | ||
17 | GS8662D38CGD-550I | 0 | Renesas Electronics | ||
18 | MT29F8G01ADAFD12-AAT:F TR | 228 | Renesas Electronics | ||
19 | GS8662D37BGD-450I | 0 | Renesas Electronics | ||
20 | SN74V283-6PZA | 0 | Renesas Electronics |