制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 7.5 ns |
最大时钟频率 | Maximum Clock Frequency | 117 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 265 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Reel |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V67903S75B |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
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1 | GS81302QT07GE-318 | 0 | Renesas Electronics | ||
2 | BR25H040F-2CE2 | NA | 50 | Renesas Electronics | |
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5 | MT53B512M16D1Z11MWC1 | 0 | Renesas Electronics | ||
6 | MT29F128G08CBCABL85A3WC1 | 0 | Renesas Electronics | ||
7 | IS25WP064D-JBLE-TR | 0 | Renesas Electronics | ||
8 | CY7C1041G30-10ZSXET | 0 | Renesas Electronics | ||
9 | GS8662T06BD-500 | 0 | Renesas Electronics | ||
10 | IS62WV5128DBLL-45BLI | 0 | Renesas Electronics | ||
11 | MT53D768M64D4SQ-053 WT ES:A | 0 | Renesas Electronics | ||
12 | 7014S12PFG | 0 | Renesas Electronics | ||
13 | W25N512GWCIG TR | 0 | Renesas Electronics | ||
14 | AS6C8008A-45BIN | 0 | Renesas Electronics | ||
15 | SN74V283-15PZA | 0 | Renesas Electronics | ||
16 | S29GL128S10TFB020 | 0 | Renesas Electronics | ||
17 | LE25U40CQES00-AH | 0 | Renesas Electronics | ||
18 | AS7C3256A-15TINTR | 0 | Renesas Electronics | ||
19 | AT45DB081E-SHN-T | 76000 | Renesas Electronics | ||
20 | 93LC86C-E/SN | 0 | Renesas Electronics |