制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Reel |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3556 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS8662DT38BD-500I | 0 | Renesas Electronics | ||
2 | AS4C32M16D3L-12BINTR | 0 | Renesas Electronics | ||
3 | GS8128018GT-200V | 0 | Renesas Electronics | ||
4 | 7006S70GB | 0 | Renesas Electronics | ||
5 | IS61LV12824-10TQLI-TR | 0 | Renesas Electronics | ||
6 | S26KS512SDGBHM030 | 0 | Renesas Electronics | ||
7 | 7006L25G | 0 | Renesas Electronics | ||
8 | 72211L10JG | 0 | Renesas Electronics | ||
9 | S70GL02GT12FHIV13 | 0 | Renesas Electronics | ||
10 | IS61WV51216EEALL-20TLI | 0 | Renesas Electronics | ||
11 | CAV24C08WE-GT3 | 1846 | Renesas Electronics | ||
12 | S25FS064SDSMFA010 | 0 | Renesas Electronics | ||
13 | GD25LE128ESIG | 0 | Renesas Electronics | ||
14 | IS45S16320F-6BLA1-TR | 0 | Renesas Electronics | ||
15 | IS49NLC18160-33BL | 0 | Renesas Electronics | ||
16 | GS816132DGD-400 | 0 | Renesas Electronics | ||
17 | 71V3556S133PFGI | 0 | Renesas Electronics | ||
18 | MT61K256M32JE-12:A | 2 | Renesas Electronics | ||
19 | 71V3556SA133BQ | 0 | Renesas Electronics | ||
20 | MT46H32M16LFBF-6 AAT:C | 0 | Renesas Electronics |