制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 512 k x 8 |
访问时间 | Access Time | 12 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.6 V |
电源电压-最小 | Supply Voltage_Min | 3 V |
电源电流—最大值 | Supply Current_Max | 170 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TSOP-44 |
封装 | Packaging | Reel |
高度 | Height | 1 mm |
长度 | Length | 18.41 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V424S12 |
类型 | Type | Asynchronous |
宽度 | Width | 10.16 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1500 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 70V658S10BC | 0 | Renesas Electronics | ||
2 | S29GL256S10FAIV23 | 0 | Renesas Electronics | ||
3 | 93AA86CT-I/SN | 0 | Renesas Electronics | ||
4 | GS8662DT11BGD-500 | 0 | Renesas Electronics | ||
5 | AT45DB161E-UUF2B-T | 0 | Renesas Electronics | ||
6 | GS8182D19BD-300 | 0 | Renesas Electronics | ||
7 | IS61VPS204836B-250TQLI-TR | 0 | Renesas Electronics | ||
8 | MT29F256G08AUCABH3-10ITZ:A | N/A | 0 | Renesas Electronics | |
9 | GS832132AGD-375 | 0 | Renesas Electronics | ||
10 | MT29GZ6A6BPIET-046IT.112 | 0 | Renesas Electronics | ||
11 | S29AL008J55TFNR20 | 0 | Renesas Electronics | ||
12 | GS8342QT10BD-250 | 0 | Renesas Electronics | ||
13 | MT53B1DATG-DC | 0 | Renesas Electronics | ||
14 | GS8342DT11BGD-550I | 0 | Renesas Electronics | ||
15 | CYRS1544AV18-250GCMB | 0 | Renesas Electronics | ||
16 | CY7C1372KVE33-167AXI | 0 | Renesas Electronics | ||
17 | GS8342TT37BD-450 | 0 | Renesas Electronics | ||
18 | IS25WP256E-JLLE | 0 | Renesas Electronics | ||
19 | S34ML08G301BHI103 | 0 | Renesas Electronics | ||
20 | MT28FW512ABA1LJS-0AAT | 0 | Renesas Electronics |