制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 2 Mbit |
组织 | Organization | 64 k x 36 |
访问时间 | Access Time | 10 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.45 V |
电源电压-最小 | Supply Voltage_Min | 3.15 V |
电源电流—最大值 | Supply Current_Max | 500 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-256 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 17 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70V658 |
类型 | Type | Asynchronous |
宽度 | Width | 17 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | GS81302DT38GE-400I | 0 | Renesas Electronics | ||
2 | MT53E4D1BDE-DC TR | 0 | Renesas Electronics | ||
3 | IS64WV6416BLL-15TLA3-TR | 0 | Renesas Electronics | ||
4 | S29AL008J70BFI023 | 0 | Renesas Electronics | ||
5 | DS28EL15Q+U | 0 | Renesas Electronics | ||
6 | W25Q64JVTCIQ | 0 | Renesas Electronics | ||
7 | IS43TR16128D-125KBL-TR | 0 | Renesas Electronics | ||
8 | 72V3650L7-5BB | 0 | Renesas Electronics | ||
9 | CY7C1262XV18-366BZXC | 0 | Renesas Electronics | ||
10 | S26HS512TGABHI003 | 0 | Renesas Electronics | ||
11 | 34AA02T-E/SN | 0 | Renesas Electronics | ||
12 | IS42VM16160K-6BLI-TR | 0 | Renesas Electronics | ||
13 | 25LC256T-H/SN | 0 | Renesas Electronics | ||
14 | GS82582DT38GE-500 | 0 | Renesas Electronics | ||
15 | SST25PF040B-80-4C-SAE-T | 0 | Renesas Electronics | ||
16 | W988D6FBGX6E TR | 0 | Renesas Electronics | ||
17 | GS8662TT38BD-350 | 0 | Renesas Electronics | ||
18 | BR93G46FVT-3AGE2 | NA | 100 | Renesas Electronics | |
19 | MT29F64G08CBABAL84A3WC1-M | 0 | Renesas Electronics | ||
20 | GS88136CGT-250V | 0 | Renesas Electronics |