制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 4 Mbit |
组织 | Organization | 128 k x 36 |
访问时间 | Access Time | 5 ns |
最大时钟频率 | Maximum Clock Frequency | 100 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 3.465 V |
电源电压-最小 | Supply Voltage_Min | 3.135 V |
电源电流—最大值 | Supply Current_Max | 255 mA |
最小工作温度 | Minimum Operating Temperature | - 40 C |
最大工作温度 | Maximum Operating Temperature | + 85 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | PBGA-119 |
封装 | Packaging | Tray |
高度 | Height | 2.15 mm |
长度 | Length | 14 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71V3556SA100 |
类型 | Type | Synchronous |
宽度 | Width | 22 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 84 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | 71V35761SA183BG8 | 0 | Renesas Electronics | ||
2 | IS46DR16640B-25EBLA1 | 0 | Renesas Electronics | ||
3 | 71V65803S100BGI8 | 0 | Renesas Electronics | ||
4 | GS81302D09E-350 | 0 | Renesas Electronics | ||
5 | CYWT1542AV18-250GCQB | 0 | Renesas Electronics | ||
6 | 70T633S12BC | 0 | Renesas Electronics | ||
7 | S26HS512TGABHI000 | 0 | Renesas Electronics | ||
8 | CY7C1061G18-15BVJXIT | 0 | Renesas Electronics | ||
9 | S34ML08G201BHB003 | 0 | Renesas Electronics | ||
10 | GS81302DT37AGD-400 | 0 | Renesas Electronics | ||
11 | GS8128418GB-200 | 0 | Renesas Electronics | ||
12 | 70V659S12BCI | 0 | Renesas Electronics | ||
13 | GS82564Z36GB-333V | 0 | Renesas Electronics | ||
14 | IS61LV5128AL-10TI | 0 | Renesas Electronics | ||
15 | M24C64-FCS6TP/K | 10000 | Renesas Electronics | ||
16 | GS8162Z18DGD-250I | 0 | Renesas Electronics | ||
17 | IS43R16320D-5TLI-TR | 0 | Renesas Electronics | ||
18 | MT29F64G08CBCGBJ4-37R:G TR | 0 | Renesas Electronics | ||
19 | W97AH6KBQX2E | 0 | Renesas Electronics | ||
20 | 93C46C-I/P | 0 | Renesas Electronics |