制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | N |
存储容量 | Memory Size | 9 Mbit |
组织 | Organization | 512 k x 18 |
访问时间 | Access Time | 12 ns |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.6 V |
电源电压-最小 | Supply Voltage_Min | 2.4 V |
电源电流—最大值 | Supply Current_Max | 355 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | CABGA-256 |
封装 | Packaging | Tray |
高度 | Height | 1.4 mm |
长度 | Length | 17 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 70T633 |
类型 | Type | Asynchronous |
宽度 | Width | 17 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 6 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MT53D512M64D4NY-046 XT ES:E TR | 0 | Renesas Electronics | ||
2 | SST25PF040C-40V/SN | 0 | Renesas Electronics | ||
3 | GS81313HQ18GK-600I | 0 | Renesas Electronics | ||
4 | 25LC640A-I/ST | 0 | Renesas Electronics | ||
5 | BR25G320FJ-3GE2 | NA | 70 | Renesas Electronics | |
6 | CY7C1061GN18-15ZSXIT | 0 | Renesas Electronics | ||
7 | 72V265LA15TFGI | 0 | Renesas Electronics | ||
8 | IS61QDB22M18-250M3L | 0 | Renesas Electronics | ||
9 | W97AH2KBVX2E | 0 | Renesas Electronics | ||
10 | GS8342Q36BD-300 | 0 | Renesas Electronics | ||
11 | RM3316-XSNI-T | 0 | Renesas Electronics | ||
12 | IS42S86400F-7TL-TR | 0 | Renesas Electronics | ||
13 | MTFC64GAJAEDQ-AAT | 0 | Renesas Electronics | ||
14 | GS8662Q07BD-300M | 0 | Renesas Electronics | ||
15 | M95640-RDW6TP | 0 | Renesas Electronics | ||
16 | 93LC56B-I/ST | 0 | Renesas Electronics | ||
17 | MT53E384M32D2DS-046 AAT:E | 3年內 | 0 | Renesas Electronics | |
18 | 71V67603S133BQ | 0 | Renesas Electronics | ||
19 | 7140LA35FB | 0 | Renesas Electronics | ||
20 | 71V67603S166PFGI8 | 0 | Renesas Electronics |