制造商 | Manufacturer | Renesas Electronics |
RoHS | Rohs | Y |
存储容量 | Memory Size | 18 Mbit |
组织 | Organization | 512 k x 36 |
访问时间 | Access Time | 3.8 ns |
最大时钟频率 | Maximum Clock Frequency | 150 MHz |
接口类型 | Interface Type | Parallel |
电源电压-最大 | Supply Voltage_Max | 2.625 V |
电源电压-最小 | Supply Voltage_Min | 2.375 V |
电源电流—最大值 | Supply Current_Max | 215 mA |
最小工作温度 | Minimum Operating Temperature | 0 C |
最大工作温度 | Maximum Operating Temperature | + 70 C |
安装风格 | Mounting Style | SMD/SMT |
封装 / 箱体 | Package_Case | TQFP-100 |
封装 | Packaging | Reel |
高度 | Height | 1.4 mm |
长度 | Length | 20 mm |
存储类型 | Memory Type | SDR |
系列 | Series | 71T75602S150 |
类型 | Type | Synchronous |
宽度 | Width | 14 mm |
商标 | Brand | Renesas / IDT |
湿度敏感性 | Moisture Sensitive | Yes |
产品类型 | Product Type | SRAM |
标准包装数量 | Standard Pack Qty | 1000 |
子类别 | Subcategory | Memory & Data Storage |
序号 | 料号 | D/C | 数量 | 品牌 | 每条可出价1次 |
1 | MTFC16GAPALHT-AAT | 0 | Renesas Electronics | ||
2 | CY7C1470V33-167AXI | 0 | Renesas Electronics | ||
3 | BR25H020FVT-2CE2 | NA | 100 | Renesas Electronics | |
4 | IS64WV12816DBLL-12BLA3-TR | 0 | Renesas Electronics | ||
5 | 72V225L10TFG8 | 0 | Renesas Electronics | ||
6 | AS7C3256A-12JIN | 0 | Renesas Electronics | ||
7 | W956D6HBCX7I | 0 | Renesas Electronics | ||
8 | 71V416S15BE8 | 0 | Renesas Electronics | ||
9 | W29N01HZDINA TR | 0 | Renesas Electronics | ||
10 | GS81302Q07E-250I | 0 | Renesas Electronics | ||
11 | W632GU8NB11I TR | 0 | Renesas Electronics | ||
12 | S25FL512SAGBHVC13 | 0 | Renesas Electronics | ||
13 | 70V9079L6PFG | 0 | Renesas Electronics | ||
14 | AS7C32098A-15TCNTR | 0 | Renesas Electronics | ||
15 | 71V016SA12BFG8 | 0 | Renesas Electronics | ||
16 | 71V65803S100BGGI8 | 0 | Renesas Electronics | ||
17 | MR256D08BMA45R | 560 | Renesas Electronics | ||
18 | GS82582D39GE-675S | 0 | Renesas Electronics | ||
19 | MT28EW256ABA1LJS-0SIT TR | 0 | Renesas Electronics | ||
20 | GS8161Z18DGD-375 | 0 | Renesas Electronics |